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IEEE 802.3af/at-Compliant, Powered Device Interface
Controllers with Integrated 70W High-Power MOSFET
ABSOLUTE MAXIMUM RATINGS
V DD to V SS ..........................................................-0.3V to +100V
DET, RTN, WAD, PG, 2EC to V SS ....................... -0.3V to +100V
CLS, SL , WK , ULP , LED to V SS ...............................-0.3V to +6V
Maximum Current on CLS (100ms maximum) .................100mA
Continuous Power Dissipation (T A = +70 N C) (Note 1)
TQFN (derate 28.6mW/ N C above +70 N C)
Operating Temperature Range .......................... -40 N C to +85 N C
Maximum Junction Temperature.....................................+150 N C
Storage Temperature Range............................ -65 N C to +150 N C
Lead Temperature (soldering, 10s) .............................. +300 N C
Soldering Temperature (reflow) .................................... +260 N C
Multilayer Board .....................................................2285.7mW
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note 1: Maximum power dissipation is obtained using JEDEC JESD51-5 and JESD51-7 specifications.
PACKAGE THERMAL CHARACTERISTICS(Note 2)
TQFN
Junction-to-Ambient Thermal Resistance ( q JA ) ..........35°C/W
Junction-to-Case Thermal Resistance ( B JC ) ..............2.7 N C/W
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial .
ELECTRICAL CHARACTERISTICS
(V IN = (V DD - V SS ) = 48V, R DET = 24.9kω, R CLS = 615ω, and R SL = 60.4kω. RTN, WAD, PG, 2EC , WK , and ULP unconnected, all
voltages are referenced to V SS, unless otherwise noted. T A = T J = -40 N C to +85 N C, unless otherwise noted. Typical values are at
T A = +25 N C.) (Note 3)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
DETECTION MODE
Input Offset Current
I OFFSET
V IN = 1.4V to 10.1V (Note 4)
10
F A
Effective Differential Input
Resistance
dR
V IN = 1.4V up to 10.1V with 1V step,
V DD = RTN = WAD = PG = 2EC (Note 5)
23.95
25.00
25.50
k I
CLASSIFICATION MODE
Classification Disable
Threshold
V TH,CLS
V IN rising (Note 6)
22.0
22.8
23.6
V
Classification Stability Time
Class 0, R CLS = 615 I
0
0.2
3.96
ms
Classification Current
I CLASS
V IN = 12.5V to
20.5V, V DD =
RTN = WAD =
PG = 2EC
Class 1, R CLS = 117 I
Class 2, R CLS = 66.5 I
Class 3, R CLS = 43.7 I
Class 4, R CLS = 30.9 I
9.12
17.2
26.3
36.4
11.88
19.8
29.7
43.6
mA
TYPE 2 (802.3at) CLASSIFICATION MODE
Class 5, R CLS = 21.3 I
52.7
63.3
Mark Event Threshold
V THM
V IN falling
10.1
10.7
11.6
V
Hysteresis on Mark Event
Threshold
0.82
V
Mark Event Current
I MARK
V IN falling to enter mark event, 5.2V P V IN
P 10.1V
0.25
0.85
mA
Reset Event Threshold
V THR
V IN falling
2.8
3.8
5.2
V
2
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